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Fig.1: Adhesion of a Carbon Nanotube at the end of the tip
 
Fig.2: Positioning the CNT on electrodes and pressing the CNT by the counter
CNT bundle
 
Fig.3: Fabricated carbon-nanotube transistor
 
Fig.4: Attachment of a CNT at the AFM tip
 
Fig.5: Intentional bending of the CNT by squeezing with two Nanomanipulators
 
Fig.6: The I-V curve measured from Fig. 3b
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Two Nanomanipulators were installed inside of an field-emission
scanning electron microscope (FE-SEM, JEOL JSM-6700F) for moving, bending,
cutting, and biasing of nanostructured materials. In situ characterizations
of electron beam-induced junctions between the tip and carbon nanotubes
were carried out and a carbon-nanotube transistor on pre-patterned metal
electrodes was produced.
The Nanomanipulators allow positioning on several millimeters, transporting
and the assembly of nanomaterials into a desired device, which generally
requires a tremendous effort because of the small dimension. For the manipulation
etched tungsten tips were used. The FE-SEM can monitor the movement of
the two Nanomanipulators, including in situ characterization.
The diameter of the produced Carbon Nanotubes (CNT)
ranges from 30 to 50 nm and the tube is metal-particle free. A fragment
of soot was brought into a specimen chamber. Fragments usually revealed
nanotubes sticking out in all directions, as shown in Fig. 1.
Adhering by hydrocarbon
deposit:
It is possible to fix a single carbon nanotube strand at the tip
of one manipulator in the following way:
The Nanomanipulator was moved until the tungsten tip touches a CNT. The
electron beam was focused on this contact area and intensively irradiated
for around 10 minutes in order to solidify the adhesion. The adhesion
is achieved by depositing an extra material in the contact, where the
inset demonstrates one end of nanotube exposed to the electron beam to
be swollen. This electron beam-induced deposit (EBID) is reportedly attributed
to the hydrocarbons. A measurable size of the deposit is required for
the secure adhesion. It is observed that the hydrocarbon deposit is very
simple and convenient means for welding nanostructured materials. A strong
adhesion between the nanotube and the tip was established through this
method. It is physically strong enough to endure the tensile stress necessary
to break apart the CNT wall.
After attaching the single nanotube to the tip, the
manipulator was moved away from the fragment of nanotubes to pull this
single tube out of its bundle.
A carbon-nanotube transistor:
A carbon-nanotube transistor is constructed on patterned electrodes,
where four electrodes are aligned in parallel within a mm. In order to
place an individual CNT on those electrodes, first a single strand of
nanotube was moved onto the electrodes. A new CNT bundle on the tip of
the second Nanomanipulator was prepared by similar EBID method to form
a second sharp tip. This allows to press a single strand of nanotube placed
already on the electrode without damage, as shown in Fig. 2. The other
manipulator was then pulled out carefully, which left a single strand
of the nanotube successfully on the metal electrodes, as shown in Fig.
3. It turned out that this approach with two maneuverable manipulators
can save labor time and reduce the trial and error during the manipulation
and could be applied for any type of interconnections between nanostructured
materials and macroworld characterization systems and even in cautious
MEMS fabrications.
Assembly at an AFM tip:
A CNT was attached at an AFM tip, as shown in Fig. 4. An electrostatic
force exerted between the nanotube and AFM tip attracted the nanotube
towards the AFM tip and the nanotube abruptly stuck to the tip. When the
nanotube was misaligned to the tip axis, it was carefully dragged to align
along the tip axis by the counter manipulator. After locally spot-welding
with the EBID a single nanotube was well adhered at the AFM tip, see Figure
4.
Current measurements:
The conductivity trough a CNT and its junctions is measured by
connecting two manipulators through a single strand of the CNT, as shown
in Fig. 5. The I-V curve is demonstrated in Fig. 6 and the characteristics
of the I-V curve is under study.
Contact to the authors:
Correspondence can be addressed to: leeyoung@yurim.skku.ac.kr
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